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Preliminary
RJH60F7ADPK
Silicon N Channel IGBT High Speed Power Switching
Features
* High speed switching * Low on-state voltage * Fast recovery diode REJ03G1837-0100 Rev.1.00 Oct 13, 2009
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
C 4
G
1. Gate 2. Collector 3. Emitter 4. Collector (Flange)
E
1
2
3
Absolute Maximum Ratings
(Tc = 25C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25C Tc = 100C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal impedance (Diode) Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. PW 5 s, duty cycle 1% Symbol VCES VGES IC IC ic(peak) Note1 iDF(peak) Note2 PC j-c j-c Tj Tstg Ratings 600 30 90 50 180 100 328.9 0.38 2.0 150 -55 to +150 Unit V V A A A A W C/W C/W C C
REJ03G1837-0100 Rev.1.00 Oct 13, 2009 Page 1 of 6
RJH60F7ADPK
Preliminary
Electrical Characteristics
(Tj = 25C)
Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf VECF1 trr Min 4 Typ 1.6 4890 198 83 48 36 122 95 1.6 140 Max 100 1 8 1.75 2.1 Unit A A V V V pF pF ns ns ns ns V ns Test Conditions VCE = 600V, VGE = 0 VGE = 30 V, VCE = 0 VCE = 10V, IC = 1 mA IC = 50 A, VGE = 15V Note3 IC = 90 A, VGE = 15V Note3 VCE = 25 V VGE = 0 V f = 1 MHz IC = 30 A, Resistive Load VCC = 300 V VGE = 15 V Note3 Rg = 5 IF = 20 A
Note3
C-E diode forward voltage C-E diode reverse recovery time Notes: 3. Pulse test
IF = 20 A diF/dt = 100 A/s
REJ03G1837-0100 Rev.1.00 Oct 13, 2009 Page 2 of 6
RJH60F7ADPK
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000 160
Typical Output Characteristics
Pulse Test Ta = 25C 8.6 V 10 V 120 15 V 7.6 V 9V 8V 8.4 V
Collector Current IC (A)
100
10
PW
=
10
s
10
Collector Current IC (A)
0 s
80
1 Tc = 25C Single pulse
40 VGE = 7 V 0
0.1 1
10
100
1000
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
Collector to Emitter Saturation Voltage VCE(sat) (V)
Pulse TestV VCE = 10 Ta = 25C Pulse Test
Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical)
3.0 2.5 2.0 1.5 1.0 IC = 20 A 0.5 0 0 4 8 12 16 20 50 A 90 A Pulse Test Ta = 25C
160
Collector Current IC (A)
120
80 Tc = 75C 40 25C 0 0 2 4 6 8 10 -25C
Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical)
Collector to Emitter Saturation Voltage VCE(sat) (V)
2.0 IC = 90 A 1.6 50 A 20 A
Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical)
7 6 5 4 1 mA 3 2 1 0 -25 VCE = 10 V Pulse Test 0 25 50 75 100 125 150 IC = 10 mA
1.2
0.8
0.4 0 -25 VGE = 15 V Pulse Test 0 25 50 75 100 125 150
Gate to Emitter Cutoff Voltage VGE(off) (V)
Junction Temparature Tj (C)
Junction Temparature Tj (C)
REJ03G1837-0100 Rev.1.00 Oct 13, 2009 Page 3 of 6
RJH60F7ADPK
Preliminary
Typical Capacitance vs. Collector to Emitter Voltage (Typical)
10000 VGE = 0 V Pulse Test Ta = 25C Cies
Forward Current vs. Forward Voltage (Typical)
100
Forward Current IF (A)
Capacitance C (pF)
80
1000
60
40
100 VGE = 0 V f = 1 MHz Ta = 25C 0 50 100 150 200
Coes Cres
20 0 0 1 2 3 4 5
10
250
300
C-E Diode Forward Voltage VCEF (V)
Collector to Emitter Voltage VCE (V)
Dynamic Input Characteristics (Typical)
Collector to Emitter Voltage VCE (V) Gate to Emitter Voltage VGE (V)
800 IC = 50 A Ta = 25C VCE VGE 16 1000
Switching Characteristics (Typical) (1)
VCC = 300 V, VGE = 15 V Rg = 5 , Ta = 25C td(off) 100 td(on) tf
600
12 VCE = 600 V 300 V
400
8
Switching Time t (ns)
10
tr
200 VCE = 600 V 300 V 0 0 40 80 120 160
4
0 200
1 1 10 100 1000
Gate Charge Qg (nc)
Collector Current IC (A)
Switching Characteristics (Typical) (2)
10000 IC = 50 A, RL = 6 VGE = 15 V, Ta = 25C
Switching Characteristics (Typical) (3)
1000 IC = 50 A, RL = 6 VGE = 15 V
Switching Time t (ns)
1000
Switching Time t (ns)
td(off) 100 tr tf
100
td(off)
td(on)
td(on) 10 1
tr
tf 10 10 100 0 20 40 60 80 100 120 140
Gate Resistance Rg ()
Case Temperature Tc (C)
REJ03G1837-0100 Rev.1.00 Oct 13, 2009 Page 4 of 6
RJH60F7ADPK
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
Preliminary
Normalized Transient Thermal Impedance s (t)
10 Tc = 25C
1
D=1 0.5 0.2 0.1
j - c(t) = s (t) * j - c j - c = 0.38C/W, Tc = 25C PDM
0.01
0.1 0.05
0.0 2
D= PW T
PW T
1 shot pulse
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width
PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
Normalized Transient Thermal Impedance s (t)
10 Tc = 25C
1
D=1 0.5 0.2
0.1 0.1 0.05 2 0.0 0.01 1 shot pulse
j - c(t) = s (t) * j - c j - c = 2C/W, Tc = 25C PDM PW T 1m 10 m 100 m 1 10 D= PW T
0.01 10
100
Pulse Width Switching Time Test Circuit Ic Monitor RL Vin Monitor
PW (s) Waveform
90%
Vin
10% 90%
90%
Rg Vin = 15 V
D.U.T.
VCC
Ic td(on) ton 10% tr 10% td(off) toff tf
REJ03G1837-0100 Rev.1.00 Oct 13, 2009 Page 5 of 6
RJH60F7ADPK
Preliminary
Package Dimensions
Package Name TO-3P JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Previous Code TO-3P / TO-3PV MASS[Typ.] 5.0g
5.0 0.3
Unit: mm
1.5
15.6 0.3
4.8 0.2
0.5
1.0
3.2 0.2
14.9 0.2
19.9 0.2
1.6 1.4 Max 2.0 2.8
2.0
1.0 0.2 3.6 0.9 1.0
18.0 0.5
0.6 0.2
5.45 0.5
5.45 0.5
Ordering Information
Part No. RJH60F7ADPK-00-T0 Quantity 360 pcs Box (Tube) Shipping Container
REJ03G1837-0100 Rev.1.00 Oct 13, 2009 Page 6 of 6
0.3
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Colophon .7.2

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